Silicon-on-insulator heat sink
US9530711B2 · kind B2 · utility
4Cited by
11References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | May 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An approach for sinking heat from a transistor is provided. A method includes forming a substrate contact extending from a first portion of a silicon-on-insulator (SOI) island to a substrate. The method also includes forming a transistor in a second portion of the SOI island. The method further includes electrically isolating the substrate contact from the transistor by doping the first portion of the SOI island.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.