Method of manufacturing non-volatile memory having SONOS memory cells

US9530783B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Sung-Bin Lin · Hsinchu, TW
• Wen-Chung Chang · Hsinchu, TW

Key dates

• Filing date: Jun 3, 2015
• Grant date: Dec 27, 2016
• Expiry date: Jun 3, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

A method for manufacturing a non-volatile memory with SONOS memory cells, which includes steps of: providing a substrate; forming a first gate oxide layer and a first gate conductive layer onto the substrate; forming a MOS transistor gate by executing a photolithography process on the first gate conductive layer, and then forming an ONO structure on the substrate; and forming a second gate conductive layer on the ONO substrate, and then forming a NVM transistor gate by executing a photolithography process on the second gate conductive layer.