Capacitor and method for fabricating the same
US9530834B1 · kind B1 · utility
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6References
6Claims
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Assignee
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Key dates
| Filing date | Dec 13, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Dec 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for fabricating capacitor is disclosed. The method includes the steps of: providing a material layer; forming a patterned first conductive layer on the material layer, forming a first dielectric layer on the patterned first conductive layer; forming a second conductive layer and a cap layer on the first dielectric layer; removing part of the cap layer to form a spacer on the second conductive layer; and using the spacer to remove part of the second conductive layer for forming a trench above the patterned first conductive layer and fin-shaped structures adjacent to the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.