Methods of forming vertical transistor devices with self-aligned replacement gate structures

US9530863B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• John H. Zhang · Fishkill, US
• Carl Radens · Lagrangeville, US
• Steven Bentley · Menands, US
• Brian Alexander Cohen · Beacon, US
• Kwan-Yong Lim · Plano, US

Key dates

• Filing date: Apr 13, 2016
• Grant date: Dec 27, 2016
• Expiry date: Apr 13, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

One illustrative method disclosed herein includes, among other things, forming a vertically oriented channel semiconductor structure, forming a layer of a bottom spacer material around the vertically oriented channel semiconductor structure and forming a sacrificial material layer above the layer of a bottom spacer material. In this example, the method further includes forming a sidewall spacer adjacent the vertically oriented channel semiconductor structure and above an upper surface of the sacrificial material layer, removing the sacrificial material layer so as to define a replacement gate cavity between a bottom surface of the sidewall spacer and the layer of a bottom spacer material, and forming a replacement gate structure in the replacement gate cavity.