Semiconductor device with epitaxial structure and manufacturing method thereof
US9530886B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Dec 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a gate structure, a spacer, and a plurality of hyper-sigma (Σ) shaped epitaxial stressors. The substrate includes a first semiconductor material, and the hyper-Σ shaped epitaxial stressors include the first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is different from a lattice constant of the first semiconductor material. The hyper-Σ shaped epitaxial stressors respectively include a first portion, a second portion and a neck physically connecting the first portion and the second portion. The first portion includes a pair of first tips pointing toward the gate structure in a cross-sectional view. The second portion includes a pair of second tips pointing toward the gate structure in the cross-sectional view. The neck includes a first slanted surface in the first portion and a second slanted surface in the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.