Chueh-Yang Liu
27Patents
3h-index
20Co-inventors
55Inventor score
Filing activity: Nov 4, 2014 → May 14, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9716165B1 | Field-effect transistor and method of making the same | Electricity | 9 | Active |
| US9646889B1 | Method of removing a hard mask layer on a gate structure while forming a protective layer on the surface of a substrate | Electricity | 4 | Active |
| US10079143B2 | Method of forming semiconductor device having wick structure | Electricity | 3 | Active |
| US9613808B1 | Method of forming multilayer hard mask with treatment for removing impurities and forming dangling bonds | Electricity | 2 | Active |
| US10312084B2 | Semiconductor device and fabrication method thereof | Electricity | 2 | Active |
| US9960084B1 | Method for forming semiconductor device | Electricity | 2 | Active |
| US9728397B1 | Semiconductor device having the insulating layers cover a bottom portion of the fin shaped structure | Electricity | 1 | Active |
| US11056288B2 | Nanodendrite with ruthenium oxide capacitor and method | Electricity | 1 | Active |
| US9793105B1 | Fabricating method of fin field effect transistor (FinFET) | Electricity | 1 | Active |
| US9748111B2 | Method of fabricating semiconductor structure using planarization process and cleaning process | Electricity | 1 | Active |
| US9466480B2 | Cleaning process for oxide | Electricity | 1 | Active |
| US9633904B1 | Method for manufacturing semiconductor device with epitaxial structure | Electricity | 0 | Active |
| US9530886B1 | Semiconductor device with epitaxial structure and manufacturing method thereof | Electricity | 0 | Active |
| US10651174B2 | FinFET structure and fabricating method of gate structure | Electricity | 0 | Active |
| US10505041B2 | Semiconductor device having epitaxial layer with planar surface and protrusions | Electricity | 0 | Active |
| US9570315B2 | Method of interfacial oxide layer formation in semiconductor device | Electricity | 0 | Active |
| US9929264B2 | Field-effect transistor and method of making the same | Electricity | 0 | Active |
| US10128366B2 | Field-effect transistor | Electricity | 0 | Active |
| US9966266B2 | Apparatus for semiconductor wafer treatment and semiconductor wafer treatment | Electricity | 0 | Active |
| US9871113B2 | Semiconductor process | Electricity | 0 | Active |
| US9741818B2 | Manufacturing method of semiconductor structure for improving quality of epitaxial layers | Electricity | 0 | Active |
| US9627534B1 | Semiconductor MOS device having a dense oxide film on a spacer | Electricity | 0 | Active |
| US9741572B1 | Method of forming oxide layer | Electricity | 0 | Active |
| US9899520B2 | Method for fabricating semiconductor device | Electricity | 0 | Active |
| US11367869B2 | Glass bottles based silicon electrode materials | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.