Optical device structure using GaN substrates for laser applications
US9531164B2 · kind B2 · utility
46Cited by
92References
42Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 13, 2010 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Apr 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.