Patent · US Active

Single crystal ingot, semiconductor wafer and method of manufacturing semiconductor wafers

US9536838B1 · kind B1 · utility

0Cited by

3References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Johannes Freund · Dietenhofen, DE
Helmut Oefner · Zorneding, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Aug 10, 2015
Grant date	Jan 3, 2017
Priority date	—
Expiry date	Aug 10, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2223/54493
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An embodiment of a method of manufacturing semiconductor wafers comprises forming a notch or a flat in a semiconductor ingot extending along an axial direction. A plurality of markings are formed in the semiconductor ingot. At least some of the plurality of markings at different positions along the axial direction are distinguishable from each other by a characteristic feature. The semiconductor ingot is then sliced into semiconductor wafers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.