Patent · US Active

FET device with tuned gate work function

US9536974B2 · kind B2 · utility

0Cited by

1References

13Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventor

Sylvain Baudot · Dresden, DE

Key dates

Filing date	Apr 17, 2015
Grant date	Jan 3, 2017
Priority date	—
Expiry date	Apr 17, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/822
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a semiconductor device is provided including forming a gate structure comprising a metal-containing layer over a semiconductor layer and doping the metal-containing layer by tilted ion implantation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.