Semiconductor device with control structure including buried portions and method of manufacturing

US9536999B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Matteo Dainese · Munich, DE
• Peter Lechner · Vaterstetten, DE
• Roman Baburske · Otterfing, DE

Key dates

• Filing date: Sep 8, 2014
• Grant date: Jan 3, 2017
• Expiry date: Sep 8, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes transistor cells with source zones of a first conductivity type and body zones of a second conductivity type. The source and body zones are formed in a semiconductor mesa formed from a portion of a semiconductor body. Control structures include first portions extending into the semiconductor body on at least two opposing sides of the semiconductor mesa, second portions in a distance to the first surface between the first portions, and third portions in a distance to the first surface and connecting the first and the second portions, wherein constricted sections of the semiconductor mesa are formed between neighboring third portions.