Reduction of degradation due to hot carrier injection
US9537001B2 · kind B2 · utility
1Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2015 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Jun 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
Abstract
In a general aspect, a high-voltage metal-oxide-semiconductor (HVMOS) device can include comprising a first gate dielectric layer disposed on a channel region of the HVMOS device and a second gate dielectric layer disposed on at least a portion of a drift region of the HVMOS device. The drift region can be disposed laterally adjacent to the channel region. The second gate dielectric layer can have a thickness that is greater than a thickness of the first gate dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.