Tellurium compounds useful for deposition of tellurium containing materials

US9537095B2 · kind B2 · utility

Assignee

• ENTEGRIS, INC. · US

Inventors

• Matthias Stender · Aurora, US
• Chongying Xu · New Milford, US
• Tianniu Chen · Westford, US
• William Hunks · Waterbury, US
• Philip S. H. Chen · Bethel, US
• Jeffrey F. Roeder · Brookfield, US
• Thomas H. Baum · New Fairfield, US

Key dates

• Filing date: Jul 16, 2014
• Grant date: Jan 3, 2017
• Expiry date: Sep 4, 2034

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/305
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).