Amorphous silicon crystallizing method, crystallized silicon film forming method, semiconductor device manufacturing method and film forming apparatus
US9540743B2 · kind B2 · utility
2Cited by
2References
8Claims
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Key dates
| Filing date | Dec 10, 2014 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Dec 10, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.