Word line dependent temperature compensation scheme during sensing to counteract cross-temperature effect
US9543028B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2014 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Dec 17, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods for reducing cross-temperature dependent word line failures using a temperature dependent sensing scheme during a sensing operation are described. In some embodiments, during a read operation, the sensing conditions applied to memory cells within a memory array (e.g., the sensing time, source line voltage, or bit line voltage) may be set based on a temperature of the memory cells during sensing and a word line location of the memory cells to be sensed. In one example, the memory array may comprise a NAND memory array that includes a NAND string and the sensing time for sensing a memory cell of the NAND string and the source line voltage applied to a source line connected to a source end of the NAND string may be set based on the temperature of the memory cells during sensing and the word line location of the memory cells to be sensed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.