Manufacturing method of semiconductor device that includes forming plural nitride semiconductor layers of identical material
US9543146B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2015 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Sep 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a manufacturing method of a semiconductor device, comprising: forming a first nitride semiconductor layer on a substrate using a first temperature; decreasing a substrate temperature to a second temperature lower than the first temperature, after the forming the first nitride semiconductor layer; forming a second nitride semiconductor layer on the first nitride semiconductor layer using the second temperature; increasing the substrate temperature to a third temperature higher than the first temperature, after the forming the second nitride semiconductor layer; and forming a third nitride semiconductor layer on the second nitride semiconductor layer using the third temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.