Patent · US Active

Method for processing a carrier, a method for operating a plasma processing chamber, and a method for processing a semiconductor wafer

US9543157B2 · kind B2 · utility

0Cited by

2References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Renner · Highland, US
Lothar Brencher · Radeberg, DE

Key dates

Filing date	Sep 30, 2014
Grant date	Jan 10, 2017
Priority date	—
Expiry date	Sep 30, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32136
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first material from the carrier by an etchant, the processing chamber including an exposed inner surface including aluminum and the etchant including a halogen; and, subsequently, performing a hydrogen plasma process in the processing chamber to remove a second material from at least one of the carrier or the inner surface of the processing chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.