Semiconductor device with recombination region

US9543389B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Roman Baburske · Otterfing, DE
• Peter Kanschat · Soest, DE

Key dates

• Filing date: Dec 11, 2013
• Grant date: Jan 10, 2017
• Expiry date: Feb 28, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A semiconductor device includes a drift zone in a semiconductor body. A charge-carrier transfer region forms a pn junction with the drift zone in the semiconductor body. A control structure electrically connects a recombination region to the drift zone during a desaturation cycle and disconnects the recombination region from the drift zone outside the desaturation cycle. During the desaturation cycle the recombination region reduces a charge carrier plasma in the drift zone and reduces reverse recovery losses without adversely affecting blocking characteristics.