Semiconductor switching device including charge storage structure

US9543398B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Anton Mauder · Kolbermoor, DE
• Matteo Dainese · Munich, DE
• Franz Hirler · Isen, DE
• Christian Jaeger · Munich, DE
• Maximilian Roesch · Villach, AT
• Wolfgang Roesner · Austin, US
• Martin Stiftinger · Stockdorf, DE
• Robert Strenz · Radebeul, DE

Key dates

• Filing date: Jul 31, 2015
• Grant date: Jan 10, 2017
• Expiry date: Jul 31, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A semiconductor switching device includes a first load terminal electrically connected to source zones of transistor cells. The source zones form first pn junctions with body zones. A second load terminal is electrically connected to a drain construction that forms second pn junctions with the body zones. Control structures, which include a control electrode and charge storage structures, directly adjoin the body zones. The control electrode controls a load current through the body zones. The charge storage structures insulate the control electrode from the body zones and contain a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load electrode.