Method of manufacturing a reduced free-charge carrier lifetime semiconductor structure

US9543405B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Holger Ruething · Munich, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Frank Hille · Munich, DE
• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: Mar 28, 2014
• Grant date: Jan 10, 2017
• Expiry date: Apr 23, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/00

Abstract

A method of manufacturing a reduced free-charge carrier lifetime semiconductor structure includes forming a plurality of transistor gate structures in trenches arranged in a semiconductor substrate, forming a body region between adjacent ones of the transistor gate structures and forming an end-of-range irradiation region between adjacent ones of the transistor gate structures, the end-of-range irradiation region having a plurality of vacancies.