Methods, apparatus and system for fabricating high performance finFET device
US9543441B2 · kind B2 · utility
3Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2015 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Mar 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least one method, apparatus and system disclosed herein fin field effect transistor (finFET) comprising a bulbous fin head. A fin of a gate of a transistor is formed. A first recess step is performed for striping a hard mask material by a first dimension to expose a first portion of the fin. An epitaxy layer is formed upon the first portion. An oxidation process is performed upon the fin. An oxide removal process is performed upon the fin to provide a bulbous shape upon the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.