Byoung-Gi Min
6Patents
2h-index
22Co-inventors
47Inventor score
Filing activity: Dec 7, 2001 → Nov 4, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9419101B1 | Multi-layer spacer used in finFET | Electricity | 12 | Active |
| US9543441B2 | Methods, apparatus and system for fabricating high performance finFET device | Electricity | 3 | Active |
| US9419139B2 | Nitride layer protection between PFET source/drain regions and dummy gate during source/drain etch | Electricity | 1 | Active |
| US9601392B1 | Device characterization by time dependent charging dynamics | Electricity | 1 | Active |
| US9735064B2 | Charge dynamics effect for detection of voltage contrast defect and determination of shorting location | Electricity | 1 | Active |
| US6817971B2 | Cardiopulmonary life support system | Human Necessities | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.