Patent · US Active

Switch device and storage unit

US9543512B2 · kind B2 · utility

13Cited by

3References

19Claims

0Family size

Assignee

SONY SEMICONDUCTOR SOLUTIONS CORPORATION · JP

Inventors

Kazuhiro Ohba · Rifu, JP
Hiroaki Sei · Yokohama, JP

Key dates

Filing date	Jan 6, 2015
Grant date	Jan 10, 2017
Priority date	—
Expiry date	Jan 6, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/8833

Abstract

A switch device includes: a first electrode; a second electrode arranged to face the first electrode; and a switch layer provided between the first electrode and the second electrode. The switch layer includes a first layer containing a chalcogen element, and a second layer containing a high resistance material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.