Method of reducing tungsten film roughness and resistivity
US9546419B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 15, 2013 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Aug 15, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45525
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for controlling crystal size in bulk tungsten layers are disclosed herein. Methods for depositing a bulk tungsten metal layer can include positioning a substrate with a barrier layer in a processing chamber, forming a tungsten nucleation layer, post-treating the nucleation layer with one or more treatment gas cycles including an activating gas and a purging gas, heating the substrate to a deposition temperature, and depositing a bulk tungsten layer with alternating nitrogen flow on the nucleation layer. The post-treatment cycling can be applied optionally to the bulk metal deposition with alternating nitrogen flow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.