Inventor · Cupertino, CA, US

Amit Khandelwal

19Patents
8h-index
44Co-inventors
64Inventor score

Filing activity: Dec 10, 2004 → Oct 31, 2013

Most-cited inventions

PatentTitleAreaCited byStatus
US7964505B2 Atomic layer deposition of tungsten materials Electricity 150 Active
US7405158B2 Methods for depositing tungsten layers employing atomic layer deposition techniques Electricity 87 Expired
US7429402B2 Ruthenium as an underlayer for tungsten film deposition Emerging Cross-Sectional Technologies 81 Active
US7732327B2 Vapor deposition of tungsten materials Electricity 48 Active
US7745333B2 Methods for depositing tungsten layers employing atomic layer deposition techniques Electricity 38 Active
US8071478B2 Method of depositing tungsten film with reduced resistivity and improved surface morphology Electricity 36 Active
US7691442B2 Ruthenium or cobalt as an underlayer for tungsten film deposition Emerging Cross-Sectional Technologies 34 Active
US7514353B2 Contact metallization scheme using a barrier layer over a silicide layer Electricity 25 Active
US7521379B2 Deposition and densification process for titanium nitride barrier layers Electricity 8 Active
US8187970B2 Process for forming cobalt and cobalt silicide materials in tungsten contact applications Electricity 7 Active
US8563424B2 Process for forming cobalt and cobalt silicide materials in tungsten contact applications Electricity 6 Active
US8551880B2 Ammonia-based plasma treatment for metal fill in narrow features Electricity 5 Active
US7838441B2 Deposition and densification process for titanium nitride barrier layers Electricity 4 Active
US9275865B2 Plasma treatment of film for impurity removal Electricity 2 Active
US8920564B2 Methods and apparatus for thermal based substrate processing with variable temperature capability Chemistry; Metallurgy 2 Active
US8513116B2 Atomic layer deposition of tungsten materials Electricity 2 Active
US8211799B2 Atomic layer deposition of tungsten materials Electricity 1 Active
US9783889B2 Apparatus for variable substrate temperature control Chemistry; Metallurgy 1 Active
US9546419B2 Method of reducing tungsten film roughness and resistivity Chemistry; Metallurgy 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.