Word line dependent programming in a memory device
US9548124B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2015 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Oct 14, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3495
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes memory cells arranged in word lines. Due to variations in the fabrication process, with width and spacing between word lines can vary, resulting in widened threshold voltage distributions. In one approach, a programming parameter is optimized for each word line based on a measurement of the threshold voltage distributions in an initial programming operation. An adjustment to the programming parameter of a word line can be based, e.g., on measurements from adjacent word lines, and a position of the word line in a set of word lines. The programming parameter can include a programming mode such as a number of programming passes. Moreover, the programming parameters from one set of word lines can be used for another set of word lines having a similar physical layout due to the variations in the fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.