Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9548198B2 · kind B2 · utility
2Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | Mar 18, 2014 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Mar 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding, and a first catalytic gas to the substrate; and supplying an oxidizing gas and a second catalytic gas to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.