Amorphous alloy space for perpendicular MTJs
US9548445B2 · kind B2 · utility
79Cited by
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12Claims
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Key dates
| Filing date | Nov 13, 2015 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Nov 13, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers. An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR. The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.