Method for an efficient modeling of the impact of device-level self-heating on electromigration limited current specifications
US9552455B2 · kind B2 · utility
1Cited by
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15Claims
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Key dates
| Filing date | Feb 3, 2015 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Apr 18, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An efficient method of calculating maximum current limits for library gates in which a current limit includes the impact of self-heating effects associated with the maximum current. A maximum current solution is obtained in a self-consistent fashion, providing a way of determining the self-consistent solution in a rapid fashion without extensive numerical calculations or simulations. The present method provides a practical approach for characterizing a large library of gates for use in CMOS designs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.