Method of controlling an ion implanter in plasma immersion mode
US9552962B2 · kind B2 · utility
1Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2012 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Jun 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2236
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.