Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer
US9553118B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2014 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Jul 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A buffer layer is disposed over the second side of the substrate. A plurality of elements is disposed over the buffer layer. The elements and the buffer layer have different material compositions. A plurality of light-blocking structures is disposed over the plurality of elements, respectively. The radiation-sensing regions are respectively aligned with a plurality of openings defined by the light-blocking structures, the elements, and the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.