Memory cells and semiconductor structures including electrodes comprising a metal, and related methods

US9553264B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Dale W. Collins · Boise, US
• Marko Milojevic · Boise, US
• Scott E. Sills · Boise, US
• Si Young PARK · Daejeon, KR

Key dates

• Filing date: Jun 1, 2015
• Grant date: Jan 24, 2017
• Expiry date: Jun 1, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

Memory cells (e.g., CBRAM cells) include an ion source material over an active material and an electrode comprising metal silicide over the ion source material. The ion source material may include at least one of a chalcogenide material and a metal. Apparatuses, such as systems and devices, include a plurality of such memory cells. Memory cells include an adhesion material of metal silicide between a ion source material and an electrode of elemental metal. Methods of forming a memory cell include forming a first electrode, forming an active material, forming an ion source material, and forming a second electrode including metal silicide over the metal ion source material. Methods of adhering a material including copper and a material including tungsten include forming a tungsten silicide material over a material including copper and treating the materials.