Predicting and controlling critical dimension issues and pattern defectivity in wafers using interferometry
US9558545B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Jul 27, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Systems and methods for predicting and controlling pattern quality data (e.g., critical dimension and/or pattern defectivity) in patterned wafers using patterned wafer geometry (PWG) measurements are disclosed. Correlations between PWG measurements and pattern quality data measurements may be established, and the established correlations may be utilized to provide pattern quality data predictions for a given wafer based on geometry measurements obtained for the give wafer. The predictions produced may be provided to a lithography tool, which may utilize the predictions to correct focus and/or title errors that may occur during the lithography process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.