Methods for making a semiconductor device including atomic layer structures using N2O as an oxygen source
US9558939B1 · kind B1 · utility
98Cited by
97References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 15, 2016 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Jan 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/791
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor device may include forming a plurality of spaced apart structures on a semiconductor substrate within a semiconductor processing chamber, with each structure including a plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base silicon monolayers defining a base semiconductor portion and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions. Furthermore, the oxygen monolayers may be formed using N2O as an oxygen source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.