Method and apparatus for forming silicon film
US9558940B2 · kind B2 · utility
1Cited by
3References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 15, 2014 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Feb 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon film in grooves formed on a surface of an object to be processed, the method including forming a first silicon film containing impurities so as to embed the first silicon film in the grooves of the object to be processed; doping the impurities in the vicinity of the surface of the first silicon film; expanding opening portions of the grooves by etching the first silicon film thereby forming expanded openings having grooves; and forming a second silicon film so as to embed the second silicon film in the grooves of the expanded openings is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.