Nanowire transistor device and method for manufacturing nanowire transistor device
US9559164B2 · kind B2 · utility
6Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Mar 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nanowire transistor device includes a substrate, a plurality of nanowires formed on the substrate, and a gate surrounding at least a portion of each nanowire. The nanowires respectively include a first semiconductor core and a second semiconductor core surrounding the first semiconductor core. A lattice constant of the second semiconductor core is different from a lattice constant of the first semiconductor core.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.