Structure and method for FinFET device with buried sige oxide
US9559181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2013 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | May 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor device that includes a substrate of a first semiconductor material; a fin feature having a first portion, a second portion and a third portion stacked on the substrate; an isolation feature formed on the substrate and disposed on sides of the fin feature; semiconductor oxide features including a second semiconductor material, disposed on recessed sidewalls of the second portion, defining dented voids overlying the semiconductor oxide features and underlying the third portion; and a gate stack disposed on the fin feature and the isolation feature. The gate stack includes a gate dielectric layer extended into and filling in the dented voids. The first and third portions include the first semiconductor material having a first lattice constant. The second portion includes the second semiconductor material having a second lattice constant different from the first lattice constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.