Methods of reading and writing data in a thyristor random access memory
US9564199B2 · kind B2 · utility
7Cited by
37References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2015 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Aug 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A volatile memory array using vertical thyristors is disclosed together with methods of operating the array to read data from and write data to the array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.