Semiconductor memory device having integrated DOSRAM and NOSRAM
US9564217B1 · kind B1 · utility
11Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2015 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Oct 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a semiconductor substrate having a main surface, at least a first dielectric layer on the main surface of the semiconductor substrate, a first OS FET device and a second OS FET device disposed on the first dielectric layer, at least a second dielectric layer covering the first dielectric layer, the first OS FET device, and the second OS FET device, a first MIM capacitor on the second dielectric layer and electrically coupled to the first OS FET device, and a second MIM capacitor on the second dielectric layer and electrically coupled to the second OS FET device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.