Metal-insulator-metal capacitor fabrication with unitary sputtering process
US9564310B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2015 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Nov 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the formation of a MIM capacitor on a substrate is described. Initially, a target comprising a metal is sputtered in the presence of nitrogen to form at least a portion of a bottom electrode. Next, the target is further sputtered in the presence of oxygen to form at least a part of an insulator. Finally, the target is even further sputtered in the presence of nitrogen to form a portion of a top electrode. The insulator is sandwiched between the bottom electrode and the top electrode. The formation of the bottom electrode, the insulator, and the top electrode is performed in a sputter deposition chamber without removing the substrate therefrom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.