Selective inhibition in atomic layer deposition of silicon-containing films
US9564312B2 · kind B2 · utility
393Cited by
180References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2014 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Nov 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.