Method and apparatus for fabricating dielectric structures
US9564329B2 · kind B2 · utility
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4References
18Claims
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Key dates
| Filing date | Nov 25, 2014 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Nov 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite dielectric structure having one or more Leakage Blocking Layers (LBL) interleaved with one or more Laminate Dielectric Layers (LDL), Alloy Dielectric Layers (ADL), or Co-deposit Dielectric Layers (CDL). Each LDL, ADL, and CDL includes dopants incorporated in a respective base dielectric layer (BDL); where LDLs are formed by incorporating a doping layer into a BDL using a laminate method, ADLs are formed by incorporating a dopant into a BDL using an alloying method; and CDLs are formed by pulsing a BDL base material and a dopant together using a co-deposit method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.