Ultra low silicon loss high dose implant strip
US9564344B2 · kind B2 · utility
2Cited by
164References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 2015 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | May 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.