Patent · US Active

Power package with integrated magnetic field sensor

US9564423B2 · kind B2 · utility

4Cited by

1References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Liu Chen · Munich, DE
Toni Salminen · Munich, DE
Stefan Mieslinger · Kottgeisering, DE
Giuliano Angelo Babulano · Ottobrunn, DE
Jens Oetjen · Borgo San Lazzaro, DE
Markus Dinkel · Unterhaching, DE
Franz Jost · Stuttgart, DE

Key dates

Filing date	Jun 23, 2015
Grant date	Feb 7, 2017
Priority date	—
Expiry date	Jun 23, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/4903
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power semiconductor package includes a substrate having a plurality of metal leads, a power semiconductor die attached to a first one of the leads and a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die. The magnetic field sensor is operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.