Patent · US Active

Semiconductor device with a semiconductor body containing hydrogen-related donors

US9564495B2 · kind B2 · utility

4Cited by

8References

7Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Johannes Georg Laven · Taufkirchen, DE
Hans-Joachim Schulze · Taufkirchen, DE
Moriz Jelinek · Villach, AT
Werner Schustereder · Villach, AT

Key dates

Filing date	Mar 25, 2016
Grant date	Feb 7, 2017
Priority date	—
Expiry date	Mar 25, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/66
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor body with parallel first and second surfaces and containing hydrogen-related donors. A concentration profile of the hydrogen-related donors vertical to the first surface includes a maximum value of at least 1E15 cm−3 at a first distance to the first surface and does not fall below 1E14 cm−3 over at least 60% of an interval between the first surface and the first distance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.