Dual-target sputter deposition with controlled phase difference between target powers
US9567667B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Sep 18, 2014 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Nov 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/347
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.