Methods of doping substrates with ALD
US9570307B2 · kind B2 · utility
5Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2015 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Nov 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.