Plasma etching method
US9570312B2 · kind B2 · utility
1Cited by
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4Claims
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Assignee
Inventors
Key dates
| Filing date | May 29, 2013 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | May 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage (3) to 100° C. or greater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.