Method of interfacial oxide layer formation in semiconductor device
US9570315B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Mar 18, 2015 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Jun 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of an interfacial oxide layer formation comprises a plurality of steps. The step (S1) is to remove a native oxide layer from a surface of a substrate; the step (S2) is to form an oxide layer on a surface of a substrate by piranha solution (SPM); the step (S3) is to cleaning a surface of the oxide layer by standard clean 1 (SC1), and the step (S4) is to etch he oxide layer by a solution comprising diluted hydrogen fluoride (dHF) and ozonized pure water (DIO3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.