Method of etching a crystalline semiconductor material by ion implantation and then chemical etching based on hydrogen chloride
US9570340B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2013 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Sep 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method of etching a crystalline semiconductor material (114), the method being characterized in that it comprises: at least one ion implantation performed by implanting a plurality of ions (121) in at least one volume (113) of the semiconductor material (114) in such a manner as to make the semiconductor material amorphous in the at least one implanted volume (113), and as to keep the semiconductor material (114) in a crystalline state outside (112) the at least one implanted volume (113); and at least one chemical etching for selectively etching the amorphous semiconductor material relative to the crystalline semiconductor material, so as to remove the semiconductor material in the at least one volume (113) and so as to keep the semiconductor material outside (112) the at least one volume (113).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.