Method for forming a semiconductor image sensor device
US9570494B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2015 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Sep 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method for forming a backside illuminated image sensor includes providing a region of semiconductor material having a first major surface and a second major surface configured to receive incident light. A pixel structure is formed within the region of semiconductor material adjacent the first major surface. Thereafter, a trench structure comprising a metal material is formed extending through the region of semiconductor material. A first surface of the trench structure is adjacent the first major surface of the region of semiconductor material and a second surface adjoining the second major surface of the region of semiconductor material. A first contact structure is electrically connected to one surface of the conductive trench structure and a second contact structure is electrically connected to an opposing second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.